相关论文: Spin blockade and lifetime-enhanced transport in a…
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a…
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
The total spin of correlated electrons in a quantum dot changes with magnetic field and this effect is generally linked to the change in the total angular momentum from one magic number to another, which can be understood in terms of an…
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing…
We have achieved the few-electron regime in InAs nanowire double quantum dots. Spin blockade is observed for the first two half-filled orbitals, where the transport cycle is interrupted by forbidden transitions between triplet and singlet…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We analyzed the electronic transport through a double quantum dot in the spin blockade regime. Experiments of current rectification by Pauli exclusion principle in double quantum dots were discussed. The electron and nuclei spin dynamics…
We investigate spin currents and spin-current correlations for double quantum dots in the spin blockade regime. By analysing the time evolution of the density matrix, we obtain the spin resolved currents and derive from a generating…
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with…
Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1)…
We study electron transport in a double quantum dot in the Pauli spin blockade regime, in the presence of strong spin-orbit coupling. The effect of spin-orbit coupling is incorporated into a modified interdot tunnel coupling. We elucidate…
Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed…
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations…
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We…
Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally…
Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade…
We model spin blockade for optically excited electrons and holes in a charged semiconductor quantum dot. We study the case where the quantum dot is initially charged with a single electron and is then filled with an additional, optically…