相关论文: High-temperature PbTe diodes
Quantifying the temperature of microdevices is critical for probing nanoscale energy transport.Such quantification is often accomplished by integrating resistance thermometers into microdevices. However, such thermometers frequently become…
A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we…
Superconducting nanowires, with a critical temperature of 5.2 K, have been synthesized using an ion-beam-induced deposition, with a Gallium focused ion beam and Tungsten Carboxyl, W(CO)6, as precursor. The films are amorphous, with atomic…
Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with…
We propose the rotating thermoelectric (TE) device comprising of the single TE conductor operating in two periodical steady state modes: the switching periodical mode (P-mode) when hot and cold ends of the TE conductor are periodically…
We theoretically investigate a quantum heat diode based on two interacting flux qubits coupled to two heat baths. Rectification of heat currents is achieved by asymmetrically coupling the qubits to the reservoirs modelled as dissipative…
When diamond anvil cell (DAC) sample chambers are outfitted with both thermal insulation and electrodes, two cutting-edge experimental methods are enabled: Joule heating with spectroradiometric temperature measurement, and electrical…
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop…
Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and…
We are developing large TES arrays in combination with FDM readout for the next generation of X-ray space observatories. For operation under AC-bias, the TESs have to be carefully designed and optimized. In particular, the use of high…
Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits,…
Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
We examine the robustness of single-molecule tunneling diodes to thermal-environmental effects. The diode comprises three fragments: two different conjugated chemical groups at the boundaries, and a saturated moiety in between, breaking…
$\beta$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment…
Given a quantum state at some instant of time t, the underlying system Hamiltonian can not only predict how the state will evolve, but also the history of the state prior to t. Thereby, in order to have a directed motion, like in a diode,…
We report the optical observation of lead-vacancy (PbV) centers in diamond fabricated by Pb ion implantation and subsequent high-temperature annealing (2100 {\deg}C) under high pressure (7.7 GPa). Their optical properties were characterized…
A prerequisite to using the net spin polarization generated by a source-drain bias in three-dimensional topological insulators for spintronic applications, is understanding how such a bias alters the transport properties of these materials.…
Ultracold neutral plasmas are formed by photoionizing laser-cooled atoms near the ionization threshold. Through the application of atomic physics techniques and diagnostics, these experiments stretch the boundaries of traditional neutral…
We investigate the minimal requirements that induce a nonreciprocal response to temperature differences in a mesoscopic electronic conductor. We identify two distinct mechanisms involved in electron-electron interactions, namely inelastic…