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The metal-insulator transition (MIT) in paramagnetic VO2 is studied within LDA+DMFT(IPT), which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of the Coulomb U=5.0eV, we show how the…

强关联电子 · 物理学 2007-05-23 M. S. Laad , L. Craco , E. Müller-Hartmann

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied…

We use a novel Monte Carlo method to study the Mott transition in an anisotropic triangular lattice. The real space approach, retaining extended spatial correlations, allows an accurate treatment of non trivial magnetic fluctuations in this…

强关联电子 · 物理学 2013-01-23 Rajarshi Tiwari , Pinaki Majumdar

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

We study the antiferromagnetic metal to antiferromagnetic insulator using dynamical mean field theory and exact diagonalization methods. We find two qualitatively different behaviors depending on the degree of magnetic correlations. For…

强关联电子 · 物理学 2009-10-31 R. Chitra , G. Kotliar

Combining density functional theory (DFT) and embedded dynamical mean-field theory (DMFT) methods, we study the metal-insulator transition in $R_2$Ir$_2$O$_7$ ($R$=Y, Eu, Sm, Nd, Pr, and Bi) and the topological nature of the insulating…

强关联电子 · 物理学 2017-01-18 Hongbin Zhang , Kristjan Haule , David Vanderbilt

Although most metal-insulator transitions in doped insulators are generally viewed as Mott transitions, some systems seem to deviate from this scenario. Alkali metal-ammonia solutions are a brilliant example of that. They reveal a phase…

强关联电子 · 物理学 2009-11-13 Gennady N. Chuev , Pascal Quemerais

Twisted transition metal dichalcogenides are a new platform for realizing strongly correlated physics with high tunability. Recent transport experiments [A. Ghiotto et al. Nature 597, 345 (2021)] have reported the bandwidth-driven evolution…

强关联电子 · 物理学 2026-01-08 Yong-Yue Zong , Zhao-Long Gu , Jian-Xin Li

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We analyze the effects of the on-site Coulomb repulsion U on a band insulator using dynamical mean field theory (DMFT). We find the surprising result that the gap is suppressed to zero at a critical Uc1 and remains zero within a metallic…

强关联电子 · 物理学 2009-11-11 Arti Garg , H. R. Krishnamurthy , Mohit Randeria

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We discuss some aspects of the pressure (or interaction) driven Mott transition, in three dimensional transition metal oxides by means of dynami cal mean field theory. We isolate the universal properties of the transition from the aspects…

强关联电子 · 物理学 2009-10-31 G. Kotliar

An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…

强关联电子 · 物理学 2015-06-24 Yong-Sik Lim , Hyun-Tak Kim , B. G. Chae , D. H. Youn , K. O. Kim , K. Y. Kang , S. J. Lee , K. Kim

Recent experiments in moir\'{e} transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per…

强关联电子 · 物理学 2023-02-13 Sunghoon Kim , T. Senthil , Debanjan Chowdhury

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…

强关联电子 · 物理学 2007-05-23 Kota Hanasaki , Masatoshi Imada

Strongly correlated metals close to the Mott transition display unusual transport regimes, together with large spectral weight transfers in optics and photoemission. We briefly review the theoretical understanding of these effects, based on…

强关联电子 · 物理学 2009-11-10 A. Georges , S. Florens , T. A. Costi

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla