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The Kondo effect may develop in those cases where there are non-commuting operators describing the interaction between the conduction electrons and impurities or defects with internal degrees of freedom. This interaction may involve spin or…

强关联电子 · 物理学 2015-06-24 O. Újsághy , G. Zaránd , A. Zawadowski

An analysis of the electron localization properties in doped graphene is performed by doing a numerical multifractal analysis. By obtaining the singularity spectrum of a tight-binding model, it is found that the electron wave functions…

无序系统与神经网络 · 物理学 2013-07-01 J. E. Barrios-Vargas , Gerardo G. Naumis

The Kondo effect arises from many-body interactions between localized magnetic impurities and conduction electrons, affecting electronic properties at low temperatures. In this study, we investigate the Kondo effect within a two-dimensional…

强关联电子 · 物理学 2025-09-30 T. O. Puel , M. A. Manya , G. S. Diniz , E. Vernek , G. B. Martins

We develop a microscopic theory of the single impurity Kondo effect on a metallic surface. We calculate the hybridization energies for the Anderson Hamiltonian of a magnetic impurity interacting with surface and bulk states and show that,…

材料科学 · 物理学 2009-11-10 Chiung-Yuan Lin , A. H. Castro Neto , B. A. Jones

We examine the properties of an infinite-$U$ Anderson impurity coupled to both normal and superconducting metals. Both the cases of a quantum dot and a quantum point contact containing an impurity are considered; for the latter, we study…

强关联电子 · 物理学 2009-10-31 Aashish A. Clerk , Vinay Ambegaokar , Selman Hershfield

We analyze the electronic properties of adatom doped graphene in the low impurity concentration regime. We focus on the Anderson localized regime and calculate the localization length ($\xi$) as a function of the electron doping and an…

介观与纳米尺度物理 · 物理学 2014-02-07 Gonzalo Usaj , Pablo S. Cornaglia , C. A. Balseiro

We reveal that optical saturation of the low-energy states takes place in graphene for arbitrarily weak electromagnetic fields. This effect originates from the diverging field-induced interband coupling at the Dirac point. Using…

介观与纳米尺度物理 · 物理学 2024-01-02 Behrooz Semnani , Roland Jago , Safieddin Safavi-Naeini , Amir Hamed Majedi , Ermin Malic , Philippe Tassin

Progress in the fabrication of nanometer-scale electronic devices is opening new opportunities to uncover the deepest aspects of the Kondo effect, one of the paradigmatic phenomena in the physics of strongly correlated electrons. Artificial…

A system of generalized kinetic equations for the distribution functions of two-dimensional Dirac fermions scattered by impurities is derived in the Born approximation with respect to short-range impurity potential. It is proven that the…

介观与纳米尺度物理 · 物理学 2011-01-14 M. Auslender , M. I. Katsnelson

We discuss localization properties of the Dirac-like electronic states in monolayers of graphite. In the framework of a general disorder model, we identify the conditions under which such standard localization effects as logarithmic…

介观与纳米尺度物理 · 物理学 2009-11-11 D. V. Khveshchenko

Motivated by experiments on ion irradiated graphene, we compute the resistivity of graphene with dilute impurities. In the local moment regime we employ the perturbation theory up to third order in the exchange coupling to determine the…

材料科学 · 物理学 2011-09-12 Sung-Po Chao , Vivek Aji

The Kondo divergences owing to interaction of current carriers with local moments in highly correlated electron systems are considered within the Hubbard and s-d exchange models with infinitely strong on-site interaction, the many-electron…

强关联电子 · 物理学 2015-06-25 V. Yu. Irkhin , A. V. Zarubin

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for…

介观与纳米尺度物理 · 物理学 2014-01-16 S. Gattenloehner , W. -R. Hannes , P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin , M. Titov

The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath…

材料科学 · 物理学 2013-07-22 Ryota Ifuku , Kosuke Nagashio , Tomonori Nishimura , Akira Toriumi

We study graphene which has both spin-orbit coupling (SOC), taken to be of the Kane-Mele form, and a Zeeman field induced due to proximity to a ferromagnetic material. We show that a zigzag interface of graphene having SOC with its pristine…

介观与纳米尺度物理 · 物理学 2016-02-17 Ranjani Seshadri , K. Sengupta , Diptiman Sen

Topological phases of matter are often characterized by interface states, which were already known to occur at the boundary of a band-inverted junction in semiconductor heterostructures. In IV-VI compounds such interface states are properly…

介观与纳米尺度物理 · 物理学 2017-09-05 A. Diaz-Fernandez , F. Dominguez-Adame

Two-dimensional (2D) materials, composed of single atomic layers, have attracted vast research interest since the breakthrough discovery of graphene. One major benefit of such systems is the simple ability to tune the chemical potential by…

超导电性 · 物理学 2020-10-01 Gopi Nath Daptary , Eyal Walach , Efrat Shimshoni , Aviad Frydman

We study the interaction between graphene and a single-molecule-magnet, [Fe4(L)2(dpm)6]. Focusing on the closest Iron ion in a hollow position with respect to the graphene sheet, we derive a channel selective tunneling Hamiltonian, that…

介观与纳米尺度物理 · 物理学 2021-09-03 Ignacio M. Vicent , Luca Chirolli , Francisco Guinea

We address the nature of the disordered state that results from the adsorption of adatoms in graphene. For adatoms that sit at the center of the honeycomb plaquette, as in the case of most transition metals, we show that the ones that form…

无序系统与神经网络 · 物理学 2014-08-27 Jose H. Garcia , Bruno Uchoa , Lucian Covaci , Tatiana G. Rappoport

We prove a simple theorem on the overlap of the wavefunctions of a manybody system with and without a single impurity and show how, and under which conditions, this leads to the ``Orthogonality Catastrophe'' (OC) described by Anderson. A…

强关联电子 · 物理学 2007-05-23 Nic Shannon