相关论文: Bound hole states in a ferromagnetic (Ga,Mn)As env…

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian,…

Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where…

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar…

The electronic structure of diluted magnetic semiconductors is studied, especially focusing on the hole character. The Haldane-Anderson model is extend to a magnetic impurity, and is analyzed in the Hartree-Fock approximation. Due to the…

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the…

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…

The properties of neutral acceptor states in zinc-blende semiconductors are re-examined in the frame of extended-basis $sp^3d^5s^*$ tight-binding model. The symmetry discrepancy between envelope function theory and atomistic calculations is…

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a…

We investigate physical properties of an Anderson impurity embedded in the bulk of a topological insulator. The slave-boson mean-field approximation is used to account for the strong electron correlation at the impurity. Different from the…

We study impurity bound states and impurity-induced order in the superconducting state of LiFeAs within a realistic five-band model based on the band structure and impurity potentials obtained from density functional theory (DFT). In…

Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic…

We investigate the effect of magnetic impurities on the local quasiparticle density of states (LDOS) in iron-based superconductors. Employing the two-orbital model where 3$d$ electron and hole conduction bands are hybridizing with the…

Many-particle electron states in semiconductor quantum dots with carrier-mediated ferromagnetism are studied theoretically within the self-consistent Boltzmann equation formalism. Depending on the conditions, a quantum dot may contain there…

Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous research for a couple of decades. A significant effort has been devoted to studies of magnetic polarons (MP) in these nanostructures. These…

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…

Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…

A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three…

Ingap states are commonly observed in semiconductors and are often well characterized by a hydrogenic model within the effective mass approximation. However, when impurities are strong, they significantly perturb all momentum eigenstates,…

The formation of bound states of holes in an antiferromagnetic spin-1/2 background is studied using numerical techniques applied to the ${\rm t-J}$ Hamiltonian on clusters with up to 26 sites. An analysis of the binding energy as a function…

We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between…