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相关论文: Half-metallic silicon nanowires

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On the basis of the spin-polarized density functional theory calculations, we demonstrate that partially-open carbon nanotubes (CNTs) observed in recent experiments have rich electronic and magnetic properties which depend on the degree of…

材料科学 · 物理学 2009-11-16 Bing Huang , Young-Woo Son , Gunn Kim , Wenhui Duan , Jisoon Ihm

Motivated by the ongoing interest in nitrides as materials for spintronics applications we have studied effects of doping with magnetic transition-metal elements (T=Cr,Mn,Fe,Co and Ni) on the electronic properties of semiconducting scandium…

材料科学 · 物理学 2020-09-23 Fares Benissad , Abdesalem Houari

Half-metals have fully spin polarized charge carriers at the Fermi surface. Such polarization usually occurs due to strong electron--electron correlations. Recently [Phys. Rev. Lett. {\bf{119}}, 107601 (2017)], we have demonstrated…

强关联电子 · 物理学 2018-11-13 A. L. Rakhmanov , A. O. Sboychakov , K. I. Kugel , A. V. Rozhkov , Franco Nori

Properties of transition metal (TM) doped single wall (8,0) SiC nanotube is investigated using first principles density functional theory as implemented within quantum espresso code. The properties studied are electronic, optical, and…

材料科学 · 物理学 2022-05-20 A. T. Mulatu , K. N. Nigussa , L. D. Deja

Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular…

介观与纳米尺度物理 · 物理学 2017-03-14 M. Golam Rabbani , Sunil R. Patil , M. P. Anantram

We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…

强关联电子 · 物理学 2012-10-15 Andrew C. Potter , Maissam Barkeshli , John McGreevy , T. Senthil

A detailed investigation of the electronic - and magneto - transport properties of Nd0.8Sr0.2MnO3 with the variation of grain size (down to 42 nm) is presented here. Interestingly, we observe that the ferromagnetic insulating state is…

材料科学 · 物理学 2010-08-11 S. Kundu , T. K. Nath

We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi…

介观与纳米尺度物理 · 物理学 2023-04-19 A. L. Rakhmanov , A. V. Rozhkov , A. O. Sboychakov , Franco Nori

Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating,…

介观与纳米尺度物理 · 物理学 2020-05-01 An-Qi Wang , Xing-Guo Ye , Da-Peng Yu , Zhi-Min Liao

We study theoretically the current debatable issue about the effect of transition-metal (TM) substitution in iron-based superconductors through treating all of the TM ions as randomly distributed impurities. The extra electrons from TM…

超导电性 · 物理学 2012-05-08 S. L. Liu , Tao Zhou

Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure, magnetic properties, and optical properties of GaSb, which…

材料科学 · 物理学 2020-01-07 Chuang Wang , Wenhui Wan , Yanfeng Ge , Yong-Hong Zhao , Kaicheng Zhang , Yong Liu

We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluorinated ABNNRs have been systematically analyzed by means of…

Itinerant spin polaron and metallic ferromagnetism are theoretically predicted in the Mott insulator in semiconductor moir\'e superlattices doped below and above half filling of the narrow moir\'e band, respectively. The existence of spin…

强关联电子 · 物理学 2023-07-05 Margarita Davydova , Yang Zhang , Liang Fu

The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity…

材料科学 · 物理学 2019-11-12 Yanyu Liu , Wei Zhou , Gang Tang , Chao Yang , Xueyun Wang , Jiawang Hong

Half-metals, featuring ideal 100\% spin polarization, are widely regarded as key materials for spintronic and quantum technologies; however, the half-metallic state is intrinsically fragile, as it relies on a delicate balance of exchange…

材料科学 · 物理学 2026-01-13 San-Dong Guo , Pan Zhou

We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…

强关联电子 · 物理学 2017-12-04 D. C. Cabra , G. L. Rossini , A. Ferraz , G. I. Japaridze , H. Johannesson

The future of spintronic and semiconductor applications demands materials with tailored electronic and magnetic properties. This study uses density functional theory to investigate the electronic structure of the half-metallic compound…

材料科学 · 物理学 2025-07-08 Sujoy Datta , Prashant Singh

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure…

材料科学 · 物理学 2009-11-11 H. Akai , M. Ogura

Metal nanoparticles are the most frequently used nanostructures in plasmonics. However, besides nanoparticles, metal nanowires feature several advantages for applications. Their elongation offers a larger interaction volume, their…

Moir\'e heterostructures of transition metal dichalcogenides exhibit Mott-insulating behaviour both at half-filling as well as at fractional fillings, where electronic degrees of freedom form self-organized Wigner crystal states. An open…

强关联电子 · 物理学 2024-01-31 Urban F. P. Seifert , Leon Balents