通过范德瓦耳斯异质堆叠中邻近效应实现少层 NbSe2 从三维到二维 Ising 超导的转变
超导电性
2021-11-15 v1 介观与纳米尺度物理
摘要
我们报道了在三维NbSe2与单层MoS2堆叠中Ising超导的实验观测。上临界磁场的角度依赖以及上平行临界场的温度依赖证实了在覆有单层MoS2的三维NbSe2中出现了二维Ising超导。我们表明该超导相具有强Ising自旋轨道关联，使得空穴自旋非简并。我们在厚度约15 nm的少层NbSe2与单层MoS2的异质结构中观测到Ising超导，这提出了在动量空间自旋分裂费米子系统中观测具有非平凡陈数的拓扑手性超导体的有趣前景。
引用
@article{arxiv.2111.06681,
title = {Transition from three- to two-dimensional Ising superconductivity in few-layer NbSe2 by proximity effect from van der Waals heterostacking},
author = {Prakiran Baidya and Divya Sahani and Hemanta Kumar Kundu and Simrandeep Kaur and Priya Tiwari and Vivas Bagwe and John Jesudasan and Awadhesh Narayan and Pratap Raychaudhuri and Aveek Bid},
journal= {arXiv preprint arXiv:2111.06681},
year = {2021}
}