有限高度镶嵌瓦尼尔-斯塔克晶格中的耗散诱导遍历-非遍历转变
天体物理仪器与方法
2024-07-25 v1
摘要
最近的研究在包含瓦尼尔-斯塔克势的调制镶嵌晶格中观察到了赝迁移率边（pseudo-ME）的出现。这种赝迁移率边标志着区分遍历态与弱遍历态，或弱遍历态与非遍历态的临界能量，是理解瓦尼尔-斯塔克系统中输运和局域化现象的关键概念。我们通过计算稳态密度矩阵，研究了耗散对有限高度镶嵌瓦尼尔-斯塔克晶格的影响。我们的研究结果表明，无论系统的初始状态如何，特定的耗散可以将系统引导至特定状态，这些状态主要由遍历态或非遍历态主导。这表明耗散可以作为诱导这些状态之间转变的新方法，并在无无序系统中调控粒子局域化行为。
引用
@article{arxiv.2407.17302,
title = {The integration of the SOXS control electronics towards the PAE},
author = {Mirko Colapietro and Sergio D'Orsi and Giulio Capasso and Salvatore Savarese and Pietro Schipani and Laurent Marty and Ricardo Zanmar Sanchez and Matteo Aliverti and Federico Battaini and Simone Di Filippo and Kalyan Kumar Radhakrishnan Santhakumari and Davide Ricci and Bernardo Salasnich and Sergio Campana and Riccardo Claudi and Jose Araiza-Duran and Andrea Baruffolo and Sagi Ben Ami and Alex Bichkovsky and Anna Brucalassi and Rosario Cosentino and Francesco D'Alessio and Paolo D'Avanzo and Rosario Di Benedetto and Matteo Genoni and Ofir Hershko and Hanindyo Kuncarayakti and Luigi Lessio and Eugenio Martinetti and Antonio Micciche and Gaetano Nicotra and Giuliano Pignata and Adam Rubin and Salvatore Scuderi and Fabrizio Vitali and Jani Achren and Iair Arcavi and Laura Asquini and Rachel Bruch and Enrico Cappellaro and Massimo Della Valle and Avishay Gal-Yam and Marcos Hernandez Diaz and Jari Kotilainen and Marco Landoni and Gianluca Li Causi and Seppo Mattila and Matteo Munari and Hector Perez Ventura and Michael Rappaport and Marco Riva and Steven Smartt and Maximilian Stritzinger and David Young},
journal= {arXiv preprint arXiv:2407.17302},
year = {2024}
}