中文

介质内腔中发射体的$E1$与$M1$自发衰变率

光学 2015-04-23 v1 其他凝聚态物理

摘要

我们讨论了位于从巨大、均匀、各向同性、线性、无损耗、无色散且连续的介质中挖出的真实腔体内的发射体的E1E1M1M1自发衰变率。介质衰变率与真空衰变率之比由 Γm/Γ0=[G(u)]2n3/u\Gamma_m/\Gamma_0 = [G(u)]^2 n^3 / u 给出,其中 G(u)=3u/(2u+1)G(u) = 3u/(2u+1) 为局域场修正因子,n=ϵμ/(ϵ0μ0)n = \sqrt{\epsilon\mu/(\epsilon_0\mu_0)} 为介质的折射率,ϵ(ϵ0)\epsilon(\epsilon_0) 为介质(真空)的电容率,μ(μ0)\mu(\mu_0) 为介质(真空)的磁导率,对于E1E1跃迁 u=ϵ/ϵ0u = \epsilon/\epsilon_0,对于M1M1跃迁 u=μ0/μu = \mu_0/\mu

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引用

@article{arxiv.1504.05787,
  title  = {The $E1$ & $M1$ Spontaneous Decay Rates for an Emitter Inside a Cavity Within a Medium},
  author = {Jaideep Singh},
  journal= {arXiv preprint arXiv:1504.05787},
  year   = {2015}
}

备注

16 pages, no figures. This short note is based on an early draft of a paper we wrote describing our measurement of the hyperfine quenching rate of the clock transition in Yb-171, see http://dx.doi.org/10.1103/PhysRevLett.113.033003