Spontaneous current generation in gated nanostructures
介观与纳米尺度物理
2009-11-10 v1
摘要
We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current.
引用
@article{arxiv.cond-mat/0411606,
title = {Spontaneous current generation in gated nanostructures},
author = {D. W. Horsell and A. K. Savchenko and Y. M. Galperin and V. I. Kozub and V. M. Vinokur and D. A. Ritchie},
journal= {arXiv preprint arXiv:cond-mat/0411606},
year = {2009}
}