SLIM：一种用于分层介质中损耗导体建模的良态单源边界元方法
计算物理
2020-12-29 v2 计算工程、金融与科学
摘要
边界元方法（BEM）通过基于表面的离散化实现了损耗导体的高效电磁建模。现有的导体建模 BEM 技术要么需要昂贵的双重基函数，要么需要使用单层和双层势算子以获得良态系统矩阵。当导体嵌入层状介质中且必须调用昂贵的多层格林函数（MGF）时，相关的计算成本尤为显著。本工作提出了一种新颖的单源 BEM 公式，其无需双重基函数即可获得良态系统矩阵。所提出的单层阻抗矩阵（SLIM）公式不需要用双层势来建模背景介质，从而降低了与 MGF 相关的成本。通过来自不同应用的实际算例展示了该方法的准确性与高效性。
引用
@article{arxiv.2007.07378,
title = {SLIM: A Well-Conditioned Single-Source Boundary Element Method for Modeling Lossy Conductors in Layered Media},
author = {Shashwat Sharma and Piero Triverio},
journal= {arXiv preprint arXiv:2007.07378},
year = {2020}
}
备注
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