硅探测器：超高能物理实验中的损伤、建模与长期行为预期
仪器与探测器
2008-11-26 v1 高能物理 - 唯象学
摘要
在本文中，材料的结构修饰与器件的退化被建模并与实验数据比较，考虑了多种电阻率、温度、晶体取向和氧浓度，并顾及除空位与填隙原子外新primary四重配位缺陷的存在。对下一代高能物理实验如LHC、SLHC、VLHC或ULHC中具体环境下探测器的行为作了若干估计。
引用
@article{arxiv.physics/0611142,
title = {Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy},
author = {Ionel Lazanu and Sorina Lazanu},
journal= {arXiv preprint arXiv:physics/0611142},
year = {2008}
}
备注
X-th Pisa Meeting on Advanced Detectors, May 21-27, 2006, La Biodola, Isola d'Elba (Italy), to be published in Nuclear Instruments and Methods in Physics Research A