铁电隧穿结作为高读取阻抗突触器件的建模与设计
新兴技术
2021-05-04 v1
摘要
我们提出了一个自研的铁电隧穿结（FTJ）建模框架，并对 FTJ 作为突触器件的设计进行了深入的研究。结果表明，适度低介电常数（低-k）的隧穿介电层（如 SiO2）可提高读取电流与电流动态范围。
引用
@article{arxiv.2105.00752,
title = {Modelling and design of FTJs as high reading-impedance synaptic devices},
author = {Riccardo Fontanini and Marco Massarotto and Ruben Specogna and Francesco Driussi and Mirko Loghi and David Esseni},
journal= {arXiv preprint arXiv:2105.00752},
year = {2021}
}
备注
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