通过铟吸附原子硅表面重构的宏观超导电流：Si(111)-(R7×R3)-In
介观与纳米尺度物理
2015-05-28 v2 材料科学
摘要
通过对具有In吸附原子的硅表面重构(Si(111)-(R7xR3)-In)进行直接电子输运测量，观测到了宏观且稳健的超电流。超导转变表现为在2.8 K以下出现零电阻态。I-V特性曲线显示出超导态与正常态之间尖锐且滞后的切换，具有明确的临界电流和俘获电流。二维(2D)临界电流密度J_{2D,c}在1.8 K时估计高达1.8 A/m。J_{2D,c}的温度依赖性表明，表面原子台阶起到了强耦合约瑟夫森结的作用。
引用
@article{arxiv.1107.3902,
title = {Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In},
author = {Takashi Uchihashi and Puneet Mishra and Masakazu Aono and Tomonobu Nakayama},
journal= {arXiv preprint arXiv:1107.3902},
year = {2015}
}
备注
4 pages, 3 figures; The error in the values of 2D critical current density $J_\mathrm{2D,c}$ was corrected. In the old version, the numbers were wrong by a factor of 100 due to a mechanical error. This does not affect the following analysis and conclusion