C波段 InAs-InP 量子短串埋异质结构激光器与硅波导的无隔离器集成
应用物理
2020-05-04 v1 光学
摘要
通过直接端面到端面耦合实现相互集成的 InP 上 InAs 量子短串埋异质结构激光器与硅芯片，已获得 -1.2 dB 的耦合效率，耦合激光器 RIN 为 -150 dB/Hz、线宽为 152 kHz。
引用
@article{arxiv.2005.00335,
title = {Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides},
author = {Jens H. Schmid and Mohamed Rahim and Grzegorz Pakulski and Martin Vachon and Siegfried Janz and Pavel Cheben and Dan-Xia Xu and Philip J. Poole and Pedro Barrios and Weihong Jiang and Jean Lapointe and Daniele Melati},
journal= {arXiv preprint arXiv:2005.00335},
year = {2020}
}