InN/In 纳米复合材料：等离子体激元效应与隐藏能隙的证据
材料科学
2008-07-03 v2
摘要
具有周期性 In 包裹体（占总体积高达 30%）的 InN/In 纳米复合材料表现出近 0.7 eV 的明亮发射，该发射明确与 In 团簇相关。其能量和强度取决于 In 的含量。由光伏响应给出的半导体主体中的主吸收边明显高于热探测吸收的起始点。这些发现强烈暗示了等离子体激元主导的发射和吸收，我们在考虑 In 平行带跃迁的电磁增强方面对此进行了讨论。
引用
@article{arxiv.0806.4509,
title = {InN/In nanocomposites: Evidences of plasmonic effects and hidden gap},
author = {T. V. Shubina and V. A. Kosobukin and T. A. Komissarova and V. N. Jmerik and P. S. Kopev and S. V. Ivanov and A. Vasson and J. Leymarie and N. A. Gippius and T. Araki and T. Akagi and Y. Nanishi},
journal= {arXiv preprint arXiv:0806.4509},
year = {2008}
}
备注
4 pages, 6 figures, mistakenly uploaded duplicated source files with the slightly different title