High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Timothy N. Camenzind; Asser Elsayed; Fahd A. Mohiyaddin; Ruoyu Li; Stefan Kubicek; Julien Jussot; Pol Van Dorpe; Bogdan Govoreanu; Iuliana Radu; Dominik M. Zumbühl

High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Mesoscale and Nanoscale Physics 2021-06-10 v1 Materials Science

Authors: Timothy N. Camenzind , Asser Elsayed , Fahd A. Mohiyaddin , Ruoyu Li , Stefan Kubicek , Julien Jussot , Pol Van Dorpe , Bogdan Govoreanu , Iuliana Radu , Dominik M. Zumbühl

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Abstract

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.

Keywords

field-effect transistors charge carrier mobility

Cite

@article{arxiv.2106.05254,
  title  = {High mobility SiMOSFETs fabricated in a full 300mm CMOS process},
  author = {Timothy N. Camenzind and Asser Elsayed and Fahd A. Mohiyaddin and Ruoyu Li and Stefan Kubicek and Julien Jussot and Pol Van Dorpe and Bogdan Govoreanu and Iuliana Radu and Dominik M. Zumbühl},
  journal= {arXiv preprint arXiv:2106.05254},
  year   = {2021}
}

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3 pages plus appendix 1 page with 7 figures

High mobility SiMOSFETs fabricated in a full 300mm CMOS process

Abstract

Keywords

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