Related papers: High mobility SiMOSFETs fabricated in a full 300mm…
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak…
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
The development of superconducting qubit technology has shown great potential for the construction of practical quantum computers. As the complexity of quantum processors continues to grow, the need for stringent fabrication tolerances…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an…
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first…
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on…
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…
Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few…
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…
Silicon carbide is a wide-bandgap semiconductor with an emerging CMOS technology platform and it is widely deployed in high power and harsh environment electronics. This material is also attracting interest for quantum technologies through…
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation…
The realisation of an universal quantum computer will require the operation of thousands to millions of qubits. The possibility of using existing industrial semiconductor fabrication techniques and infrastructure for up-scaling and…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…