Green Function Approach to Interface States in Band Inverted Junctions
凝聚态物理
2015-06-25 v1
摘要
We calculate interface states in semiconductor heterostructures with band inversion using a Green function approach and the so called {\em point interaction potentials}. Effects of external fields can be included in a straightforward fashion.
关键词
引用
@article{arxiv.cond-mat/9410098,
title = {Green Function Approach to Interface States in Band Inverted Junctions},
author = {F. Dominguez-Adame},
journal= {arXiv preprint arXiv:cond-mat/9410098},
year = {2015}
}
备注
6 pages, REVTEX, UCM-37-1994