块体 MAPbBr$_3$ 单晶中亮激子巨大的精细结构分裂
介观与纳米尺度物理
2019-09-16 v1
摘要
半导体中的激子精细结构分裂反映了晶体的潜在对称性与量子限域。由于后一因素强烈增强交换相互作用，多数工作集中于纳米结构。在此，我们报道了块体半导体晶体中亮激子精细结构分裂的首次观测，其中量子限域的影响可被明确排除，从而可触及材料的内禀性质。对块体甲基铵三溴化铅单晶的激子光致发光与反射谱的详细研究揭示出高达 eV 的零磁场分裂。该结果为讨论钙钛矿纳米晶中观测到的大亮激子精细结构起源提供了重要的出发点。
引用
@article{arxiv.1909.06054,
title = {Giant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr$_3$ Single Crystal},
author = {Michal Baranowski and Krzysztof Galkowski and Alessandro Surrente and Joanna M. Urban and Łukasz Klopotowski and Sebastian Mackowski and Duncan K. Maude and Rim Ben Aich and Kais Boujdaria and Maria Chamarro and Christophe Testelin and Pabitra Nayak and Markus Dollmann and Henry J. Snaith and Robin J. Nicholas and Paulina Plochocka},
journal= {arXiv preprint arXiv:1909.06054},
year = {2019}
}
备注
just accepted in Nano Letters (https://pubs.acs.org/doi/10.1021/acs.nanolett.9b02520)