Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.
@article{arxiv.1112.3190,
title = {Electron temperature in electrically isolated Si double quantum dots},
author = {A. Rossi and T. Ferrus and D. A. Williams},
journal= {arXiv preprint arXiv:1112.3190},
year = {2015}
}