Related papers: Electron temperature in electrically isolated Si d…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…
We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are…
We consider a quantum dot system whose charge fluctuations are monitored by a quantum point contact allowing for the detection of both charge and transferred heat statistics. Our system consists of two nearby conductors that exchange energy…
We propose phonon spectroscopy by electric measurements of the low-temperature conductance of coupled-quantum dots, specifically employing dephasing of the quantum electronic transport by the phonons. The setup we consider consists of a…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
We develop a general method to evaluate the Kondo temperature in a multilevel quantum dot that is weakly coupled to conducting leads. Our theory reveals that the Kondo temperature is strongly enhanced when the intradot energy-level spacing…
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose…