InGaAs/InP单光子雪崩二极管探测器的设计、制造与表征
仪器与探测器
2007-05-23 v1
摘要
本文展示了平面几何InGaAs/InP雪崩二极管的性能，这些二极管是专门为在1550nm波长附近的盖革模式操作而设计和制造的，其性能指标包括暗计数率、单光子探测效率、后脉冲和光子定时抖动。
引用
@article{arxiv.physics/0605073,
title = {Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors},
author = {Ryan E. Warburton and Sara Pellegrini and Lionel Tan and Jo Shien Ng and Andrey Krysa and Kris Groom and John P. R. David and Sergio Cova and Gerald S. Buller},
journal= {arXiv preprint arXiv:physics/0605073},
year = {2007}
}
备注
Presented at CLEO QELS, Long Beach, California (May 2006)