低能反质子在硅中的湮灭
仪器与探测器
2014-03-12 v2
摘要
CERN 反质子减速器 (AD) 上的 AEIS 实验目标是直接测量地球对反物质的引力加速度。为实现这一目标，AEIS 合作组将产生一束脉冲式、低温 (100 mK) 的反氢原子束，其速度为每秒几百米，并测量该束流相对于直线路径的垂直偏转幅度。下落反氢原子的最终位置将由位置灵敏探测器探测。该探测器由发生湮灭的有源硅部分和随后的乳胶部分组成。两者结合使得利用约 600 次重建且带时间标记的湮灭事件，就能以 1% 的精度测量 。据我们所知，本文首次直接测量了反质子在分段硅传感器中的湮灭，这是为 AEIS 实验设计位置灵敏硅探测器的第一步。我们还首次展示了能量低于 5 MeV 的反质子与蒙特卡洛模拟 (GEANT4) 的初步比较。
引用
@article{arxiv.1311.4982,
title = {Annihilation of low energy antiprotons in silicon},
author = {S. Aghion and O. Ahlén and A. S. Belov and G. Bonomi and P. Bräunig and J. Bremer and R. S. Brusa and G. Burghart and L. Cabaret and M. Caccia and C. Canali and R. Caravita and F. Castelli and G. Cerchiari and S. Cialdi and D. Comparat and G. Consolati and J. H. Derking and S. Di Domizio and L. Di Noto and M. Doser and A. Dudarev and R. Ferragut and A. Fontana and P. Genova and M. Giammarchi and A. Gligorova and S. N. Gninenko and S. Haider and J. Harasimowicz and T. Huse and E. Jordan and L. V. Jørgensen and T. Kaltenbacher and A. Kellerbauer and A. Knecht and D. Krasnický and V. Lagomarsino and A. Magnani and S. Mariazzi and V. A. Matveev and F. Moia and G. Nebbia and P. Nédélec and N. Pacifico and V. Petrácek and F. Prelz and M. Prevedelli and C. Regenfus and C. Riccardi and O. Røhne and A. Rotondi and H. Sandaker and A. Sosa and M. A. Subieta Vasquez and M. Špacek and G. Testera and C. P. Welsch and S. Zavatarelli},
journal= {arXiv preprint arXiv:1311.4982},
year = {2014}
}
备注
21 pages in total, 29 figures, 3 tables