Related papers: Fluence Dependence of Charge Collection of irradia…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…
The Compact Muon Solenoid (CMS) detector is one of two general-purpose detectors that reconstruct the products of high energy particle interactions at the Large Hadron Collider (LHC) at CERN. The silicon pixel detector is the innermost…
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
A model of the Li-diffused inactive layer in P-type high purity germanium detectors is built to describe the transportation of charge carriers and calculate the charge collection efficiency therein. The model is applied to calculate charge…
The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer…
A low cost fluorescence-based optical system is developed for detecting the presence of certain microorganisms and molecules within a diluted sample. A specifically designed device setup compatible with conventional 96 well plates is chosen…
Capacitance measurements have been made on silicon pixel sensors of types n+ on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap widths, and the n+ on n devices test several p-stop designs. The measurements examine…
In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$\Omega$cm are presented. Samples…
The CMS silicon tracker consists of two tracking devices utilizing semiconductor technology: the inner pixel and the outer strip detectors. They operate in a high-occupancy and high-radiation environment presented by particle collisions in…
Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that…
An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received.…
Diamond has been developed as a material for the detection of charged particles by ionization. Its radiation hardness makes it an attractive material for detectors operated in a harsh radiation environment e.g. close to a particle beam as…
Fluorescence collection from individual emitters plays a key role in state detection and remote entanglement generation, fundamental functionalities in many quantum platforms. Planar photonics have been demonstrated for robust and scalable…
The two innermost layers of the ALICE inner tracking system are instrumented with silicon pixel detectors. Single chip assembly prototypes of the ALICE pixels have been tested in high energy particle beams at the CERN SPS. Detection…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
Photonic integrated circuit devices can be used as refractometric opto-fluidic sensors to detect the presence of analytes in solution at low concentrations. In this work, we investigate the refractive index sensitivity of silicon nitride…
A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…