Related papers: Fluence Dependence of Charge Collection of irradia…

A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly…

Position-sensitive-detectors (PSDs) based on lateral photoeffect have been widely used in diverse applications, including optical engineering, aerospace and military fields. With increasing demands in long working distance, low energy…

Charge-coupled devices (CCDs) are widely used in astronomy to carry out a variety of measurements, such as for flux or shape of astrophysical objects. The data reduction procedures almost always assume that ther esponse of a given pixel to…

We have used a photothermal technique, in which chopped light heats the front surface of a small ( ~ 1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid nitrogen cooled…

The CMS pixel detector is the innermost component of the CMS tracker occupying the region around the centre of CMS, where the LHC beams are crossed, between 4.3 cm and 30 cm in radius and 46.5 cm along the beam axis. It operates in a…

CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…

In this paper, we present a new experimental apparatus for the measurement of the detection efficiency of free-space single-photon detectors based on the substitution method. For the first time, we extend the analysis to account for the…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

The average minimum number of bits needed for lossless readout of a pixel detector is calculated, in the regime of interest for particle physics where only a small fraction of pixels have a non-zero value per frame. This permits a…

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel…

The nonlinear response of materials, an increasingly important aspect of light-matter interaction, can be challenging to measure in highly absorbing materials. Here, we introduce an interferometric technique that enables a direct…

Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC,…

The collected charge of two pad diodes is measured along the diode width using a 5:2 GeV electron beam at the DESY II beam test facility. The electron beam enters parallel to the readout electrode plane and perpendicular to the edge of the…

Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…

Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…

For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is…

A novel graphene-optimized silicon carbide PIN detector was fabricated. Its electrical properties, charge collection performance and signal rise time were evaluated under non-irradiated conditions and under X-ray irradiation with an energy…

Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of…

The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a…