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Raman lasers is an actively developing field of nonlinear optics aiming to create efficient frequency converters and various optical sensors. Due to the growing importance of ultracompact chip-scale technologies, there is a constant demand…
A frequency-stable, broadband laser is presented for experiments on trapped ions. Since the design is based on widely available semiconductor optical amplifier technology, similar lasers can be realized for virtually any wavelength in the…
An all-optical, near-resonant laser atom trap is used to prepare an electronically excited and polarized gas target at mK-temperature for complete photo-ionization studies. As a proof-of-principal experiment, lithium atoms in the…
We demonstrate a compact laser source suitable for the trapping and cooling of potassium. By frequency doubling a fiber laser diode at 1534 nm in a waveguide, we produce 767 nm laser light. A current modulation of the diode allows to…
We demonstrate injection-locking of 120mW laser diodes operating at 397nm. We achieve stable operation with injection powers of ~100uW and a slave laser output power of up to 110mW. We investigate the spectral purity of the slave laser…
Deep laser cooling of atoms, ions, and molecules facilitates the study of fundamental physics as well as applied research. In this work, we report on the narrow-line laser cooling of thulium atoms at the wavelength of $506.2\,\textrm{nm}$…
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by…
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
Ultracold neutral plasmas are formed by photoionizing laser-cooled atoms near the ionization threshold. Through the application of atomic physics techniques and diagnostics, these experiments stretch the boundaries of traditional neutral…
The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored.…
Gallium phosphide is an important indirect band gap material with variety of applications in optics ranging from LEDs to applications in GaP/Si based solar cells. We investigated GaP using ultrafast, pump-probe coherent acoustic phonon…
This paper derives a general procedure for the numerical solution of the Lindblad equations that govern the coherences arising from multicoloured light interacting with a multilevel system. A systematic approach to finding the conservative…
We synthesize and study the structural and optical properties of nanocrystalline graphene monofluoride and graphite monofluoride, which are carbon-based wide bandgap materials. Using laser excitations 2.41 - 5.08 eV, we identify six…
We present a study on the design, growth and optical characterization of a GaN/AlGaN microcavity for the enhancement of second order non linear effects. The proposed system exploits the high second order nonlinear optical response of GaN…
In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two Distributed Bragg…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Isotope selective optical excitation of atoms is important for experiments with neutral atoms, metrology, and work with trapped ions, including quantum information processing. Polarization-enhanced absorption spectroscopy is used to…
Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we…