Related papers: Atomic gallium laser spectroscopy with violet/blue…
To date, the laser cooling of rubidium atoms has inevitably relied on 780 nm cooling light corresponding to the first excited state $5\mathrm{P}_{3/2}$. Surprisingly, we demonstrate laser cooling directly utilizing 420 nm blue light for…
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are…
Photo-ionization of a laser-cooled and compressed atomic beam from a high-flux thermal source can be used to create a high-brightness ion beam for use in Focus Ion Beam (FIB) instruments. Here we show using calculations and Doppler cooling…
The study of metallic nanoparticles has a long tradition in linear and nonlinear optics [1], with current emphasis on the ultrafast dynamics, size, shape and collective effects in their optical response [2-6]. Nanoparticles also represent…
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the…
We report on the generation of 500 mW of spectrally pure laser light at the 460.86 nm transition used for laser cooling of strontium atoms. To this end we inject a high power single mode laser diode with light from a stabilized extended…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…
Laser cooling of matter through anti-Stokes photoluminescence, where the emitted frequency of light exceeds that of the impinging laser by virtue of absorption of thermal vibrational energy, has been successfully realized in condensed…
We demonstrate the ability to load, cool and detect singly-charged calcium ions in a surface electrode trap using only visible and infrared lasers for the trapped-ion control. As opposed to the standard methods of cooling using…
Emission and absorption cross sections of the prepared materials will be measured at different spectral regions.
The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV LEDs, but it can be mitigated by the co-incorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic,…
We compare the temperature dependence of optical and electrical characteristics of commercially available GaN light-emitting diodes (LEDs) grown on silicon and sapphire substrates. Contrary to conventional expectations, LEDs grown on…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy,…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
In recent years, Gallium Arsenide (GaAs) type photocathodes have become widely used as electron sources in modern Energy Recovery Linac based light sources such as the Accelerators and Lasers in Combined Experiments (ALICE) at Daresbury…
The opportunities of the application of the recently proposed approach in optical emission spectroscopy of non-equilibrium plasmas have been studied. The approach consists of several methods of the determination of {\em absolute} particle…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a…
Buffer-gas cooling is a universal cooling technique for molecules and used for various purposes. One of its applications is using molecules inside a buffer-gas cell for low-temperature spectroscopy. Although a high-intensity signal is…