Related papers: Atomic gallium laser spectroscopy with violet/blue…
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these…
High-resolution tunable laser spectroscopy is used to measure time-resolved absorption spectra for ten neutral uranium transitions and six singly-ionized transitions in a laser produced plasma. Spectral lineshapes are analyzed to determine…
Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured.…
The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and…
We introduce an absorption imaging technique for ultracold gases that suppresses interference fringes and coherence-induced artifacts by reducing the transverse spatial coherence of the imaging light. The method preserves the narrow…
This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and…
We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have…
The implementation of a superradiant laser as an active frequency standard is predicted to provide better short-term stability and robustness to thermal and mechanical fluctuations when compared to standard passive optical clocks. However,…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…
We present an all-solid-state laser source emitting up to 2.1 W of single-frequency light at 671 nm developed for laser cooling of lithium atoms. It is based on a diode-pumped, neodymium-doped orthovanadate (Nd:YVO$_4$) ring laser operating…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
Diode lasers enable one to continuously cover the 730 to 1100 nm range as well as the 370 to 550 nm range by frequency doubling, but a large part of the electro-magnetic spectrum spanning from green to red remains accessible only through…
Advances in high-resolution laser spectroscopy have enabled many scientific breakthroughs in physics, chemistry, biology and astronomy. Optical frequency combs have pushed measurement limits with ultrahigh-frequency accuracy and…
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
We present a method for recovery of narrow homogeneous spectral features out of broad inhomogeneous overlapped profile based on second-derivative processing of the absorption spectra of alkali metal atomic vapor nanocells. The method is…
We present an experimental study of the spectra produced by optical/radio-frequency double resonance in which resonant linearly polarized laser light is used in the optical pumping and detection processes. We show that the experimental…
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and…
Prototype of gamma ray detector based on Micro Pixel Avalanche Photodiodes (MAPD) with high pixel density 15000 pixel/$mm^2$, optically coupled to Lutetium Fine Silicate (LFS) scintillator has been developed. The detection performance…
We demonstrate a two-dimensional time-domain spectroscopy method to extract amplitude and phase modifications of excited atomic states caused by the interaction with ultrashort laser pulses. The technique is based on Fourier analysis of the…