The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. Calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.
@article{arxiv.cond-mat/0204031,
title = {Raman properties of GaSb nanoparticles embedded in SiO2 films},
author = {Fa-Min Liu and Tian-Min Wang and Jian-Qi Li and Li-De Zhang and Guo-Hua Li and Fa-Min Liu and Tian-Min Wang and Jian-Qi Li and Li-De Zhang and Guo-Hua Li},
journal= {arXiv preprint arXiv:cond-mat/0204031},
year = {2007}
}
Comments
17 pages, 3 figures, 1 table. Submitted to Journal of Physics: Condensed Matter