CrSBr, a van der Waals material, stands out as an air-stable magnetic semiconductor with appealing intrinsic properties such as crystalline anisotropy, quasi-1D electronic characteristics, layer-dependent antiferromagnetism, and non-linear optical effects. In this study, we investigate the differences between the absorption and emission spectra, focusing on the origin of the emission peak near 1.7 eV observed in the photoluminescence spectrum of CrSBr. Our findings are corroborated by excitation-dependent Raman experiments. Additionally, we explore the anti-Stokes Raman spectra and observe an anomalously high anti-Stokes to Stokes intensity ratio of up to 0.8, which varies significantly with excitation laser power and crystallographic orientation relative to the polarization of the scattered light. This ratio is notably higher than that observed in graphene (≈ 0.1) and MoS2 (≈ 0.4), highlighting the unique vibrational and electronic interactions in CrSBr. Lastly, we examine stimulated Raman scattering and calculate the Raman gain in CrSBr, which attains a value of 1 × 108 cm/GW, nearly four orders of magnitude higher than that of previously studied three-dimensional systems.
@article{arxiv.2502.01794,
title = {Resonance Raman Scattering and Anomalous Anti-Stokes Phenomena in CrSBr},
author = {Satyam Sahu and Charlotte Berrezueta-Palacios and Sabrina Juergensen and Kseniia Mosina and Zdeněk Sofer and Matěj Velický and Patryk Kusch and Otakar Frank},
journal= {arXiv preprint arXiv:2502.01794},
year = {2025}
}