Related papers: Atomic gallium laser spectroscopy with violet/blue…
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…
AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…
The carrier emission efficiency of light emitting diodes is of fundamental importance for many technological applications, including the performance of GaN and other semiconductor photocathodes. We have measured the evolution of the emitted…
External-cavity diode lasers are ubiquitous in atomic physics and a wide variety of other scientific disciplines, due to their excellent affordability, coherence length and versatility. However, for higher power applications, the…
We demonstrate a diode laser system which is suitable for high-resolution spectroscopy in the 1200 nm and yellow spectral ranges. It is based on a two-facet quantum dot chip in a Littrow-type external cavity configuration. The laser is…
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers…
GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a…
We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 {\mu}m undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking…
The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage…
Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-electrical properties. Notable applications include deep-UV…
We present a simple diode laser-based photoionization scheme for generating electrons and ions with well-defined spatial and energetic (<2 eV) structures. This scheme can easily be implemented into ion or electron imaging spectrometers for…
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were…
The lasing behavior of one dimensional GaAs nanobeam cavities with embedded InAs quantum dots is studied at room temperature. Lasing is observed throughout the quantum dot PL spectrum, and the wavelength dependence of the threshold is…
A low-energy nuclear transition in the isotope thorium-229 has been excited in thorium-doped crystals with laser light. This opens the perspective towards a highly stable and robust solid-state optical nuclear clock. The required laser…
We present a versatile laser system which provides more than 1.5W of narrowband light, tunable in the range from 455-463 nm. It consists of a commercial Titanium-Sapphire laser which is frequency doubled using resonant cavity second…
Undoubtedly, Raman spectroscopy is one of the most elaborated spectroscopy tools in materials science, chemistry, medicine and optics. However, when it comes to the analysis of nanostructured specimens, accessing the Raman spectra resulting…
We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…