Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide
Optics
2018-11-19 v1
Abstract
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work we provide a first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 +/- 0.45 [W*m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4e-18 +/- 1e-18 [m^2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.
Keywords
Cite
@article{arxiv.1811.06676,
title = {Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide},
author = {Dvir Munk and Moshe Katzman and Ohad Westreich and Moran Bin Nun and Yedidya Lior and Noam Sicron and Yossi Paltiel and Avi Zadok},
journal= {arXiv preprint arXiv:1811.06676},
year = {2018}
}