High confinement, high yield Si3N4 waveguides for nonlinear optical application
Optics
2015-01-14 v3
Abstract
In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
Keywords
Cite
@article{arxiv.1410.8736,
title = {High confinement, high yield Si3N4 waveguides for nonlinear optical application},
author = {Jörn P. Epping and Marcel Hoekman and Richard Mateman and Arne Leinse and René G. Heideman and Albert van Rees and Peter J. M. van der Slot and Chris J. Lee and Klaus-J. Boller},
journal= {arXiv preprint arXiv:1410.8736},
year = {2015}
}
Comments
10 pages, 4 figures