English

Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

Other Condensed Matter 2015-06-25 v1

Abstract

We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.

Keywords

Cite

@article{arxiv.cond-mat/0611625,
  title  = {Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy},
  author = {F. Rol and S. Founta and H. Mariette and B. Daudin and Le Si Dang and J. Bleuse and D. Peyrade and J. -M. Gerard and B. Gayral},
  journal= {arXiv preprint arXiv:cond-mat/0611625},
  year   = {2015}
}