Related papers: Atomic gallium laser spectroscopy with violet/blue…
We demonstrate a new focused ion beam sample preparation method for atom probe tomography. The key aspect of the new method is that we use a neon ion beam for the final tip-shaping after conventional annulus milling using gallium ions. This…
We present modeling and interpretation of the continuum and emission lines for a sample of 51 unobscured Type 1 active galactic nuclei (AGN). All of these AGNs have high quality spectra from both XMM-Newton and Sloan Digital Sky Survey…
We present a system of room-temperature extended-cavity grating-diode lasers (ECDL) for production of light in the range 760-790nm. The extension of the tuning range towards the blue is permitted by the weak feedback in the cavity: the…
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 {\mu}m) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon…
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources.…
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias…
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum…
We have carried out theoretical research on ultra-high resolution spectroscopy of atoms (or molecules) in the suggested cell with a series of plane-parallel thin gas layers between spatially separated gas regions of this cell for optical…
Semiconductor membranes find their widespread use in various research fields targeting medical, biological, environmental, and optical applications. Often such membranes derive their functionality from an inherent nanopatterning, which…
Currently, there is great interest in laser cooling of barium monofluoride (BaF) molecules for precision tests of fundamental symmetries. We use high-resolution absorption spectroscopy to characterize several as yet imprecisely known…
Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2…
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…
Femtosecond laser-writing offers distinct capabilities for fabrication, including three-dimensional, multi-material, and sub-diffraction-limited patterning. In particular, demonstrations of laser-written quantum emitters and photonic…
Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we…
The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are…
Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through…
We generate 555.8nm light with sub-MHz linewidth through the use of laser injection-locking of a semiconductor diode at 1111.6nm, followed by frequency doubling in a resonant cavity. The integrity of the injection lock is investigated by…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…