Related papers: Atomic gallium laser spectroscopy with violet/blue…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
We report the construction of a simple, light weight and compact atomic beam spectroscopy cell for Strontium atoms. The cell is built using glass blowing technique and includes a simple Titanium Sublimation Pump for active pumping of the…
A tunable diode laser spectrometer has been employed to examine the overtone absorption lines of $^{12}$CH$_4$ in the region around 12780 cm$^{-1}$ (780 nm) at room temperature. The spectrometer sources are commercially available tunable…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…
We demonstrate Doppler-free saturated absorption spectroscopy of cold molecular radicals formed by laser ablation inside a cryogenic buffer gas cell. By lowering the temperature, congested regions of the spectrum can be simplified, and by…
Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…
Optically active defects in solid-state systems have many applications in quantum information and sensing. However, unlike free atoms, which have fixed optical transition frequencies, the inhomogeneous broadening of the transitions in…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
In this work we perform polarization spectroscopy of erbium atoms in a hollow cathode lamp (HCL) for the stabilization of a diode laser to the 401-nm transition. We review the theory behind Doppler-free polarization spectroscopy,…
Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the…
We report on an interference-filter-stabilized external cavity diode laser using a gallium-nitride-based violet laser diode. Surface-activated-bonded glass substrates were employed as cat's eye output couplers in order to suppress power…
V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of…
Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si substrates. Atomically sharp electroluminescence (EL) from Gd…
We report on the realization and characterisation of optical potentials for ultracold atoms using a superluminescent diode. The light emitted by this class of diodes is characterised by high spatial coherence but low temporal coherence. On…
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…
In this paper we present the first measurement of a Gallium Arsenide (GaAs) crystal as a scintillating calorimeter with dual heat and light readout within the DAREDEVIL project. The experimental setup features a 4.3 g GaAs (GaAs-1) crystal,…
Operating atom-interferometer gyroscopes outside a laboratory environment is challenging primarily owing to the instability of laser systems. To enhance the thermal stability of free-space laser systems, a compact laser system using fiber…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…