The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are presented. The undoped GaAs demonstrated a narrow emission band at 838 nm (1.48 eV) and a low light output of about 2 ph/keV. The GaAs:Si is characterized by three broad luminescence bands at 830 nm (1.49 eV), 1070 nm (1.16 eV), 1335 nm (0.93 eV) and a light output of about 71 ph/keV. In the case of GaAs:(Si, B), four luminescence bands at 860 nm (1.44 eV), 930 nm (1.33 eV), 1070 nm (1.16 eV) and 1335 nm (0.93 eV) were observed. A high light yield higher than 125 ph/keV was estimated for the co-doped sample. The applications of low energy gap semiconductors as cryogenic scintillators for particle detection are discussed. The GaAs is a promising crystal for a cryogenic scintillator for the dark matter (DM) detection.
@article{arxiv.1904.09362,
title = {GaAs as a bright cryogenic scintillator for the direct dark matter detection},
author = {S. Vasiukov and F. Chiossi and C. Braggio and G. Carugno and F. Moretti and E. Bourret and S. Derenzo},
journal= {arXiv preprint arXiv:1904.09362},
year = {2019}
}