Related papers: Single Event Effects in the Pixel readout chip for…

Designing integrated circuits in radiation environments such as the High Luminosity LHC (HL-LHC) is challenging. Integrated circuits will be exposed to radiation-induced Single Event Effects (SEE). In deep sub-micron technology devices, the…

The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser facilities. We present the results of a systematic study of the influence of radiation induced…

In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors implemented in a commercial high-voltage CMOS…

Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator…

Measuring signatures of strong-field quantum electrodynamics (SF-QED) processes in an intense laser field is an experimental challenge: it requires detectors to be highly sensitive to single electrons and positrons in the presence of the…

A Monte Carlo simulation has been developed to predict the spatial resolution of silicon pixel detectors. The results discussed in this paper focus on the unit cell geometry of 50 $\mu$m x 400 $\mu$m, as chosen for BTeV. Effects taken into…

Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…

Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of…

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and…

The phase-2 upgrade of the LHC will require novel pixel readout chips, which deliver hit information at drastically increased data rates and tolerate unprecedented radiation levels. The large-scale prototype chip RD53A has been designed by…

We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…

In this article, we investigate the Single Events Effects (SEE) leading to Single Event Burnout (SEB) in $\beta$-Ga$_2$O$_3$ MOSFETs. Using Silvaco TCAD, 2D simulations were performed to understand the mechanism behind the SEB mechanism in…

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…

We report on the design and testing of novel mixed analog and digital front end ASICs custom made for the single photon detectors considered for the BTeV RICH system. The key features are reviewed, as well as results achieved using…

Results of detailed simulations of the charge transfer inefficiency of a prototype CCD chip are reported. The effect of radiation damage in a particle detector operating at a future accelerator is studied by examining two electron trap…

The radiation hardness of the AToM chips of the BaBar Silicon Vertex Tracker has been investigated by means of irradiations with photons from a 60Co source and 0.9 GeV electrons. The increase in noise and the decrease in gain of the…

We report on the initial results of an experiment to determine the effects of proton radiation damage on an X-ray hybrid CMOS detector (HCD). The device was irradiated at the Edwards Accelerator Lab at Ohio University with 8 MeV protons, up…

In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO…