In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from 80 to 1000Ω⋅cm. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
@article{arxiv.1712.08338,
title = {Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate},
author = {M. Benoit and S. Braccini and R. Casanova and E. Cavallaro and H. Chen and K. Chen and F. A. Di Bello and D. Ferrere and D. Frizzell and T. Golling and S. Gonzalez-Sevilla and S. Grinstein and G. Iacobucci and M. Kiehn and F. Lanni and H. Liu and J. Metcalfe and L. Meng and C. Merlassino and A. Miucci and D. Muenstermann and M. Nessi and H. Okawa and I. Perić and M. Rimoldi and B. Ristić and D M S Sultan and S. Terzo and M. Vicente Barrero Pinto and E. Vilella Figueras and M. Weber and T. Weston and W. Wu and J. Xie and L. Xu and E. Zaffaroni and M. Zhang},
journal= {arXiv preprint arXiv:1712.08338},
year = {2018}
}