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We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…

Strongly Correlated Electrons · Physics 2009-11-13 Igor Travenec

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

Strongly Correlated Electrons · Physics 2009-10-31 M. Potthoff , W. Nolting

We demonstrate that the Mott transition exhibits universal scaling as a consequence of the breaking of a $\mathbb{Z}_2$ symmetry in momentum space. A direct consequence of this discrete symmetry breaking is the charge or Mott gap itself.…

Strongly Correlated Electrons · Physics 2025-11-25 Jinchao Zhao , Peizhi Mai , Gaurav Tenkila , Philip W. Phillips

We report a finite size scaling study of the Anderson transition. Different scaling functions and different values for the critical exponent have been found, consistent with the existence of the orthogonal and unitary universality classes…

Disordered Systems and Neural Networks · Physics 2009-10-30 Keith Slevin , Tomi Ohtsuki

We present the exact ground-state wave function and energy of the generalized Hubbard model, subjected to the condition that the number of double occupied sites is conserved, for a wide, physically relevant range of parameters. For one hole…

Condensed Matter · Physics 2009-10-22 Anatoly A. Ovchinnikov

The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…

Strongly Correlated Electrons · Physics 2009-11-11 Emiliano Papa , Tilo Stroh

The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…

Condensed Matter · Physics 2009-10-31 C. Castellani , C. Di Castro , P. A. Lee

We study the phase structure and Hall conductance quantization in weakly coupled multi-layer electron systems in the integer quantum Hall regime. We derive an effective field theory and perform a two-loop renormalization group calculation.…

Mesoscale and Nanoscale Physics · Physics 2009-10-30 Ziqiang Wang

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

Strongly Correlated Electrons · Physics 2011-12-30 V. Dobrosavljevic

Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 P. T. Coleridge , P. Zawadzki , A. S. Sachrajda , R. L. Williams , Y. Feng

We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the…

Strongly Correlated Electrons · Physics 2009-11-13 T. Senthil

We show that the metal to insulator transition, whether generated by decreasing the electron density or by increasing the spin alignment, is determined by a universal functional form of the two-electron correlation function g(r). This…

Strongly Correlated Electrons · Physics 2007-05-23 J. S. Thakur , D. Neilson

Extensive body of work has shown that for the model of a non-interacting electron in a random potential there is a quantum critical point for dimensions greater than two---a metal-insulator transition. This model also plays an important…

Disordered Systems and Neural Networks · Physics 2010-08-17 Sudip Chakravarty

We report new experimental data on the plateau-insulator transition in the quantum Hall regime, taken from a low mobility InGaAs/InP heterostructure. By employing the fundamental symmetries of the quantum transport problem we are able to…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 A. M. M. Pruisken , D. T. N. de Lang , L. A. Ponomarenko , A. de Visser

We present a new theoretical approach for the integer quantum Hall effect, which is able to describe the inter-plateau transitions as well as the transition to the Hall insulator. We find two regimes (metallic and insulator like) of the top…

Mesoscale and Nanoscale Physics · Physics 2009-10-30 J. Oswald , G. Span , F. Kuchar

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

Strongly Correlated Electrons · Physics 2007-05-23 B. Rosenow , R. Oppermann

We perform a numerical investigation of Anderson metal-insulator transition (MIT) in a twodimensional system of chiral symmetry class AIII by combining finite-size scaling, transport, density of states, and multifractality studies. The…

Disordered Systems and Neural Networks · Physics 2023-01-30 Jonas F. Karcher , Ilya A. Gruzberg , Alexander D. Mirlin

In an attempt to understand quantitatively the remarkable discoveries of metal-insulator transitions in two-dimensional systems, we generalize Mott's variable range hopping theory to the situation with strong Coulomb interaction. In our…

Strongly Correlated Electrons · Physics 2007-05-23 Wenjun Zheng , Yue Yu

We have measured the temperature dependence of the conductivity $\sigma_{xx}$ of a two-dimensional electron system deep into the localized regime of the quantum Hall plateau transition. Using variable-range hopping theory we are able to…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 F. Hohls , U. Zeitler , R. J. Haug

We have reexamined data on the possible two dimensional metal-insulator transition at B=0 in Si-MOSFETs using a nonlinear regression method to extract all scaling parameters in a single fit. By keeping track of the magnitude of errors in…

Condensed Matter · Physics 2007-05-23 D. Lilliehook , J. E. Furneaux
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