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Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System

Mesoscale and Nanoscale Physics 2009-10-31 v1 Strongly Correlated Electrons

Abstract

Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor ν\nu=3/2 insulating state is demonstrated.

Keywords

Cite

@article{arxiv.cond-mat/9906285,
  title  = {Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System},
  author = {P. T. Coleridge and P. Zawadzki and A. S. Sachrajda and R. L. Williams and Y. Feng},
  journal= {arXiv preprint arXiv:cond-mat/9906285},
  year   = {2009}
}

Comments

6 pages, 4 figures. Submitted to EP2DS XIII conference 1999