Related papers: Universal scaling, beta function, and metal-insula…
The phenomenon of Anderson localization wherein non-interacting electrons are localized by quenched impurities is a subject matter that has been extremely well studied. However, localization transition under the combined influence of…
A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that…
We study the multifractality (MF) of critical wave functions at boundaries and corners at the metal-insulator transition (MIT) for noninteracting electrons in the two-dimensional (2D) spin-orbit (symplectic) universality class. We find that…
Finite-size scaling analysis is a well-accepted method for identification and characterization of quantum phase transitions (QPTs) in superconducting, magnetic and insulating systems. We formally apply this analysis in the form suitable for…
The nature of the critical point of the Anderson transition in high magnetic fields is discussed with an emphasis on scale invariance and universality of the critical exponent. Special attention is paid to the distribution function of the…
Around a metal-to-insulator transition driven by repulsive interaction (Mott transition) the single particle excitations and the collective excitations are equally important. Here we present results for the generic susceptibilities at zero…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor…
The integer quantum Hall transition (IQHT) is one of the most mysterious members of the family of Anderson transitions. Since the 1980s, the scaling behavior near the IQHT has been vigorously studied in experiments and numerical…
Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence…
A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition…
We introduce a new method to analysis the many-body problem with disorder. The method is an extension of the real space renormalization group based on the operator product expansion. We consider the problem in the presence of interaction,…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
We explore the critical properties of a topological transition in a two-dimensional, amorphous lattice with randomly distributed points. The model intrinsically breaks the time-reversal symmetry without an external magnetic field, akin to a…
Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…
In this note we show that $\beta'_*$, the $\beta$-function slopes in the electric and magnetic theories are equal at the corresponding infrared fixed points. This follows from the scaling of the correlators of the trace of the energy…
A model consisting of a mixture of superconducting and quantum links is proposed to describe the integer quantum Hall transition. The quantum links correspond to tunneling of electrons between trajectories trapped in adjacent potential…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport…
The conductance of an open quench-disordered two-dimensional (2D) electron system subject to an in-plane magnetic field is calculated within the framework of conventional Fermi liquid theory applied to actually a three-dimensional system of…