Related papers: Anisotropic GaAs island phase grown on flat GaP: s…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001)…
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with…
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal…
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a technique which allows defect free material growth. The…
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe…
In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction…
In quantum physics, classical optics, and many other wave systems, wave confinement in a potential well is associated with discrete oscillatory states, and the ground state is typically assumed to vanish uniformly. An open question is…
The nonlinear evolution of the Weibel instability driven by the anisotropy of the electron distribution function in a collisionless plasma is investigated in a spatially one-dimensional configuration with a Vlasov code in a two-dimensional…
Astrophysical disks that are sufficiently cold and dense are linearly unstable to the formation of axisymmetric rings as a result of the disk's gravity. In practice, spiral structures are formed, which may in turn produce bound fragments.…
A transport study of two-dimensional (2D) holes confined to wide GaAs quantum wells provides a glimpse of a subtle competition between different many-body phases at Landau level filling $\nu=3/2$ in tilted magnetic fields. At large tilt…
We have considered the paraxial vector erf-Gaussian beams with field distribution in the form of the error function that are shaped by the cone of plane waves with a fractional step of the azimuthal phase distribution modulated by the…
We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a…
We design a device for the passive mode conversion of guided, axisymmetric, ultrasonic waves in hollow elastic pipes into arbitrary non-axisymmetric flexural waves that have a constant angular profile along the pipe axis. To achieve this we…
The density functional theory is used to study the electronic structure of a quantum wire in a magnetic field. In a GaAs quantum wire, a critical density has been found, below which the electron density has a strong spatial inhomogeneity.…
The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both…
Band Structures and optical matrix elements of quantum wires(QWR's) made of short-period superlattices(SPS) with strain-induced lateral ordering(SILO) are investigated theoretically via an effective bond-orbital model(EBOM) combined with a…
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding…
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…
In this paper, we address the theoretical resolution of the Vlasov-Gauss system from the linear regime to the strongly nonlinear one, when significant trapping has occurred. The electric field is that of a sinusoidal electron plasma wave…