Related papers: Anisotropic GaAs island phase grown on flat GaP: s…
We investigate the wave functions, spectrum, and g-factor anisotropy of low-energy electrons confined to self-assembled, pyramidal InAs quantum dots (QDs) subject to external magnetic and electric fields. We present the construction of…
Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect-mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here we demonstrate that spatially…
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and…
The uniform states of a model for one-dimensional chains of thin magnetic islands on a nonmagnetic substrate coupled via dipolar interactions are described here. Magnetic islands oriented with their long axes perpendicular to the chain…
We have investigated experimentally and theoretically the far-infrared (FIR) absorption of gated, deep-mesa-etched GaAs/Al$_x$Ga$_{1-x}$As quantum wires. To overcome Kohn's theorem we have in particular prepared double-layered wires and…
We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine…
We observe pronounced transport anisotropies in magneto-transport experiments performed in the two-dimensional electron system of a Si/SiGe heterostructure. They occur when an in-plane field is used to tune two Landau levels with opposite…
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to…
We present a model for the disorder of the heterointerfaces in GaAs quantum wells including long-range components like monolayer island formation induced by the surface diffusion during the epitaxial growth process. Taking into account both…
The quark gluon plasma as produced in heavy ion collisions is exposed to early anisotropies in momentum space due to its rapid expansion. Such anisotropies can lead to non-abelian plasma instabilities, driven by unstable gluonic modes that…
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis…
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with…
The discovery of the phase space spirals in the Solar neighborhood in Gaia Data Release 2 has prompted various attempts to understand their origin. A source of bending waves, which has been neglected as a cause of the phase spiral, is…
The electron density of states in the open quantum well formed by the downward band bending region at the surface of cesiated p-type GaN is investigated. We theoretically predict the existence of metastable resonant states in this non…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the…
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a…
As a system with both profound physics and promising application potentials, the strain-induced self-assembled semiconductor nanostructures have been investigated for decades of years. The optical and electrical properties of this system…
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is…