The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices
@article{arxiv.2010.03107,
title = {The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3},
author = {Prashanth Gopalan and Sean Knight and Ashish Chanana and Megan Stokey and Praneeth Ranga and Michael A. Scarpulla and Sriram Krishnamoorthy and V. Darakchieva and Zbigniew Galazka and Klaus Irmscher and Andreas Fiedler and Steve Blair and Mathias Schubert and Berardi Sensale-Rodriguez},
journal= {arXiv preprint arXiv:2010.03107},
year = {2020}
}
Comments
Main Manuscript is 6 pages long with 3 figures and 1 table. The submission also contains a Supplementary Info section