English

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Mesoscale and Nanoscale Physics 2016-08-31 v1
Authors: S. Schmult , C. Gerl , U. Wurstbauer , C. Mitzkus , W. Wegscheider
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Abstract

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

Keywords

two-dimensional hole gas high mobility GaAs Rashba spin-splitting mobility anisotropy

Cite

@article{arxiv.cond-mat/0503323,
  title  = {Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs},
  author = {S. Schmult and C. Gerl and U. Wurstbauer and C. Mitzkus and W. Wegscheider},
  journal= {arXiv preprint arXiv:cond-mat/0503323},
  year   = {2016}
}

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