Self-assembled island formation in heteroepitaxial growth
Statistical Mechanics
2009-10-30 v1
Abstract
We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process, involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion.
Keywords
Cite
@article{arxiv.cond-mat/9703252,
title = {Self-assembled island formation in heteroepitaxial growth},
author = {Albert-László Barabási},
journal= {arXiv preprint arXiv:cond-mat/9703252},
year = {2009}
}
Comments
ReVTeX, 10 pages, 3 ps figures