We use atomistic simulations with an empirical potential (EAM) to study the elastic effects of heteroepitaxial islands on adatom diffusion. We measure the diffusion barrier on pure stressed substrate and near a misfit island, as well as the detachment barrier from islands of different size.
@article{arxiv.cond-mat/9909328,
title = {Strain in heteroepitaxial growth},
author = {E. Somfai and L. M. Sander},
journal= {arXiv preprint arXiv:cond-mat/9909328},
year = {2007}
}