X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.
@article{arxiv.cond-mat/0411642,
title = {Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering},
author = {A. Malachias and T. U. Schulli and G. Medeiros-Ribeiro and M. Stoffel and O. G. Schmidt and T. H. Metzger and R. Magalhaes-Paniago},
journal= {arXiv preprint arXiv:cond-mat/0411642},
year = {2007}
}